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Registro completo
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Biblioteca (s) : |
INIA Tacuarembó. |
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Fecha : |
21/02/2014 |
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Actualizado : |
05/11/2020 |
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Autor : |
LETELIER A., E. |
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Afiliación : |
ELÍAS LETELIER A. |
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Título : |
Labranza cero en las terrazas marinas de la VI región y comuna de Santo Domingo : Chile. |
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Fecha de publicación : |
1986 |
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Fuente / Imprenta : |
ln: Reunión sobre Sistemas de Labranza y Conservación de Suelos : 1985 nov. 5-7 : Marcos Juárez, Córdoba, Argentina Trabajos presentados. Montevideo (Uruguay): IICA/BID/PROCISUR, 1986. |
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Páginas : |
p. 105-114 |
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Serie : |
(Dialogo / IICA-PROCISUR; 15) |
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ISBN : |
92-9039-133-8 |
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Idioma : |
Español |
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Thesagro : |
CERO-LABRANZA; CHILE; CULTIVO EN TERRAZAS; FACTORES DE RENDIMIENTO; MANEJO DEL SUELO; TERRAZAS; TRITICUM AESTIVUM. |
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Asunto categoría : |
A50 Investigación agraria |
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Marc : |
LEADER 00808naa a2200229 a 4500
001 1024574
005 2020-11-05
008 1986 bl uuuu u00u1 u #d
020 $a92-9039-133-8
100 1 $aLETELIER A., E.
245 $aLabranza cero en las terrazas marinas de la VI región y comuna de Santo Domingo$bChile.
260 $c1986
300 $ap. 105-114
490 $a(Dialogo / IICA-PROCISUR; 15)
650 $aCERO-LABRANZA
650 $aCHILE
650 $aCULTIVO EN TERRAZAS
650 $aFACTORES DE RENDIMIENTO
650 $aMANEJO DEL SUELO
650 $aTERRAZAS
650 $aTRITICUM AESTIVUM
773 $tln: Reunión sobre Sistemas de Labranza y Conservación de Suelos : 1985 nov. 5-7 : Marcos Juárez, Córdoba, Argentina Trabajos presentados. Montevideo (Uruguay): IICA/BID/PROCISUR, 1986.
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INIA Tacuarembó (TBO) |
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 | Acceso al texto completo restringido a Biblioteca INIA La Estanzuela. Por información adicional contacte bib_le@inia.org.uy. |
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Registro completo
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Biblioteca (s) : |
INIA La Estanzuela. |
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Fecha actual : |
25/09/2020 |
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Actualizado : |
12/08/2021 |
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Tipo de producción científica : |
Artículos en Revistas Indexadas Internacionales |
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Circulación / Nivel : |
Internacional - -- |
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Autor : |
VANDEGEER, R.K.; ZHAO, C.; CIBILS-STEWART, X.; WUHRER, R.; HALL, C.R.; HARTLEY, S.E.; TISSUE, D.T.; JOHNSON, S.N. |
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Afiliación : |
REBECCA K. VANDEGEERA, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; CHENCHEN ZHAO, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; XIMENA CIBILS-STEWART, INIA (Instituto Nacional de Investigación Agropecuaria), Uruguay; RICHARD WUHRER, Advanced Materials Characterisation Facility (AMCF), Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; CASEY R. HALL, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; SUSAN E. HARTLEY, Department of Animal and Plant Sciences, University of Sheffield, Sheffield, S10 2TN, UK.; DAVID T. TISSUE, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; SCOTT N. JOHNSON, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia. |
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Título : |
Silicon deposition on guard cells increases stomatal sensitivity as mediated by K+ efflux and consequently reduces stomatal conductance. |
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Fecha de publicación : |
2021 |
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Fuente / Imprenta : |
Physiologia Plantarum, Volume 171, Issue 3, Pages 358-370, March 2021. Doi: https://doi.org/10.1111/ppl.13202 |
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DOI : |
doi.org/10.1111/ppl.13202 |
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Idioma : |
Inglés |
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Notas : |
Article history: First published: 03 September 2020/Version of Record online:16 September 2020/Accepted manuscript online:
03 September 2020/Manuscript accepted:01 September 2020/Manuscript revised:27 August 2020/Manuscript received:30 June 2020/First published: 03 September 2020. Corresponding author: e-mail: R.Vandegeer@westernsydney.edu.au |
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Contenido : |
Abstract: Silicon (Si) has been widely reported to improve plant resistance to water stress via various mechanisms including cuticular Si deposition to reduce leaf transpiration. However, there is limited understanding of the effects of Si on stomatal physiology, including the underlying mechanisms and implications for resistance to water stress. We grew tall fescue (Festuca arundinacea Schreb. cv. Fortuna) hydroponically, with or without Si, and treated half of the plants with 20% polyethylene glycol (PEG) to impose physiological drought (osmotic stress). Scanning electron microscopy (SEM) in conjunction with X-ray mapping (XRM) found that Si was deposited on stomatal guard cells and as a sub-cuticular layer in Si-treated plants. Plants grown in Si had a 28% reduction in stomatal conductance and a 23% reduction in cuticular conductance. When abscisic acid was applied exogenously to epidermal leaf peels to promote stomatal closure, Si plants had 19% lower stomatal aperture compared to control plants (i.e.increased stomatal sensitivity) and an increased efflux of guard cell K+ ions. However, the changes in stomatal physiology with Si were not substantial enough to improve water stress resistance, as shown by a lack of significant effect of Si on water potential, growth, photosynthesis and water-use efficiency.
Our findings suggest a novel underlying mechanism for reduced stomatal conductance with Si application; specifically, that Si deposition on stomatal guard cells promotes greater stomatal sensitivity as mediated by guard cell K+ efflux. MenosAbstract: Silicon (Si) has been widely reported to improve plant resistance to water stress via various mechanisms including cuticular Si deposition to reduce leaf transpiration. However, there is limited understanding of the effects of Si on stomatal physiology, including the underlying mechanisms and implications for resistance to water stress. We grew tall fescue (Festuca arundinacea Schreb. cv. Fortuna) hydroponically, with or without Si, and treated half of the plants with 20% polyethylene glycol (PEG) to impose physiological drought (osmotic stress). Scanning electron microscopy (SEM) in conjunction with X-ray mapping (XRM) found that Si was deposited on stomatal guard cells and as a sub-cuticular layer in Si-treated plants. Plants grown in Si had a 28% reduction in stomatal conductance and a 23% reduction in cuticular conductance. When abscisic acid was applied exogenously to epidermal leaf peels to promote stomatal closure, Si plants had 19% lower stomatal aperture compared to control plants (i.e.increased stomatal sensitivity) and an increased efflux of guard cell K+ ions. However, the changes in stomatal physiology with Si were not substantial enough to improve water stress resistance, as shown by a lack of significant effect of Si on water potential, growth, photosynthesis and water-use efficiency.
Our findings suggest a novel underlying mechanism for reduced stomatal conductance with Si application; specifically, that Si deposition on stomatal guard cells promote... Presentar Todo |
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Palabras claves : |
LEAF WATER POTENTIAL; PHOTOSYNTHESIS; RELATIVE WATER CONTENT; SCANNNG ELECTON MICROSCOPY. |
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Thesagro : |
FESTUCA ARUNDINACEA. |
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Asunto categoría : |
H01 Protección de plantas - Aspectos generales |
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Marc : |
LEADER 02859naa a2200289 a 4500
001 1061345
005 2021-08-12
008 2021 bl uuuu u00u1 u #d
024 7 $adoi.org/10.1111/ppl.13202$2DOI
100 1 $aVANDEGEER, R.K.
245 $aSilicon deposition on guard cells increases stomatal sensitivity as mediated by K+ efflux and consequently reduces stomatal conductance.$h[electronic resource]
260 $c2021
500 $aArticle history: First published: 03 September 2020/Version of Record online:16 September 2020/Accepted manuscript online: 03 September 2020/Manuscript accepted:01 September 2020/Manuscript revised:27 August 2020/Manuscript received:30 June 2020/First published: 03 September 2020. Corresponding author: e-mail: R.Vandegeer@westernsydney.edu.au
520 $aAbstract: Silicon (Si) has been widely reported to improve plant resistance to water stress via various mechanisms including cuticular Si deposition to reduce leaf transpiration. However, there is limited understanding of the effects of Si on stomatal physiology, including the underlying mechanisms and implications for resistance to water stress. We grew tall fescue (Festuca arundinacea Schreb. cv. Fortuna) hydroponically, with or without Si, and treated half of the plants with 20% polyethylene glycol (PEG) to impose physiological drought (osmotic stress). Scanning electron microscopy (SEM) in conjunction with X-ray mapping (XRM) found that Si was deposited on stomatal guard cells and as a sub-cuticular layer in Si-treated plants. Plants grown in Si had a 28% reduction in stomatal conductance and a 23% reduction in cuticular conductance. When abscisic acid was applied exogenously to epidermal leaf peels to promote stomatal closure, Si plants had 19% lower stomatal aperture compared to control plants (i.e.increased stomatal sensitivity) and an increased efflux of guard cell K+ ions. However, the changes in stomatal physiology with Si were not substantial enough to improve water stress resistance, as shown by a lack of significant effect of Si on water potential, growth, photosynthesis and water-use efficiency. Our findings suggest a novel underlying mechanism for reduced stomatal conductance with Si application; specifically, that Si deposition on stomatal guard cells promotes greater stomatal sensitivity as mediated by guard cell K+ efflux.
650 $aFESTUCA ARUNDINACEA
653 $aLEAF WATER POTENTIAL
653 $aPHOTOSYNTHESIS
653 $aRELATIVE WATER CONTENT
653 $aSCANNNG ELECTON MICROSCOPY
700 1 $aZHAO, C.
700 1 $aCIBILS-STEWART, X.
700 1 $aWUHRER, R.
700 1 $aHALL, C.R.
700 1 $aHARTLEY, S.E.
700 1 $aTISSUE, D.T.
700 1 $aJOHNSON, S.N.
773 $tPhysiologia Plantarum, Volume 171, Issue 3, Pages 358-370, March 2021. Doi: https://doi.org/10.1111/ppl.13202
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